L14G2 DATASHEET PDF

L14G2 Hermetic Silicon Phototransistor. BASE 2 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance ) on all non-nominal dimensions. Part Number: L14G2, Maunfacturer: Motorola, Part Family: L1, File type: PDF, Document: Datasheet – semiconductor. L14G2 datasheet, L14G2 circuit, L14G2 data sheet: QT – HERMETIC SILICON PHOTOTRANSISTOR,alldatasheet, datasheet, Datasheet search site for.

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This high-density System-in-Package SiP integrates controller, power switches, and support components. Skip to main content.

L14G2 Datasheet PDF

L14G2 is an NPN phototransistor. It acts as a photodetector in the sense that it can convert the incident light into electric response.

They are commonly used as sensors usually paired with a light source like LED. These are the bipolar transistors having a transparent datashet. This transparent case exposes the base collector region of transistor to external light.

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When light incidents on p14g2 junction, electrons are generated by the photons. These electrons are injected in the base of phototransistor. The current gain of the transistor amplifies the resulting photocurrent at the base collector junction.

Thus a phototransistor conducts in the presence of light and remains in off mode in absence of light. A phototransistor is different from a simple transistor dafasheet the way that in the latter, voltage applied to the base is replaced by light striking it.

HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3

Simply put, a phototransistor amplifies variations in the light striking it. If a base terminal is available, it is used to bias its light response. Photodiodes can also be used for similar function as phototransistors, but they have much lower gain and thus ratasheet photocurrent.

Phototransistors cannot detect low intensities of light but are more responsive to the exposed light. Also, the transistor response lasts for a longer daatsheet as compared to a photodiode.

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The required light source is a gallium arsenide LED with peak wavelength is nm. The emitter lead is indicated by a protruding edge in the transistor case.

The base is nearest to the emitter. The collector is at the other extreme side of the casing.

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